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Part Name(s) : 2SC3847 C3847
Fujitsu
Description : Silicon High Speed POWER Transistor
Part Name(s) : 10N80 10N80L-TF1-T 10N80G-TF1-T 10N80L-TF2-T 10N80G-TF2-T 10N80L-T3P-T 10N80G-T3P-T 10N80L-TQ2-T 10N80G-TQ2-T 10N80L-TQ2-R
Unisonic Technologies
Description : 10A, 800V N-CHANNEL POWER MOSFET
Unisonic Technologies
Description : 10A, 800V N-CHANNEL POWER MOSFET (Rev - 2014)
Unisonic Technologies
Description : 10A, 800V N-CHANNEL POWER MOSFET (Rev - 2012)
Part Name(s) : BUW81A
Semelab - > TT Electronics plc
Description : Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Part Name(s) : FS10SM-16A
Powerex
Description : Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Part Name(s) : FS10SM-16A
MITSUBISHI ELECTRIC
Description : MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
SavantIC Semiconductor
Description : Silicon NPN POWER Transistors
Part Name(s) : 2SC3090 C3090
Inchange Semiconductor
Description : Silicon NPN POWER Transistors
Part Name(s) : H12N65 H12N65E H12N65F
Hi-Sincerity Mocroelectronics
Description : N-Channel POWER MOSFET (650V,12A)
Quanzhou Jinmei Electronic
Description : Silicon NPN POWER Transistors
Part Name(s) : IRFIBE30G IRFIBE30
International Rectifier
Description : HEXFET POWER MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A
Part Name(s) : STS4DNFS30L 4DFS30L
STMicroelectronics
Description : N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier (Rev - 2011)
Part Name(s) : D10SB20 D10SB40 D10SB60 D10SB80
Rugao Dachang Electronics Co., Ltd
Description : Single-phase Silicon Bridge Rectifier
